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In addition to crucibles, we produce these heating elements made of graphite for silicon crystal growing. Silicon wafer manufacturing begins with the growing of a silicon crystal using the Czochralski process. With a diameter of 300 mm and a length of more than 2000 mm, the single crystals are grown from the molten silicon in a crystal-growing facility. The molten material is located in a CFC or graphite crucible. Our CFC or graphite heating elements, which are secured with CFC screws, are used to heat the graphite crucible.